Pan Stanford Publishing Pte Ltd Nanometer CMOS

Providing a comprehensive overview of all the important issues concerning modern Si MOSFETs, this examination covers the principles of MOSFET operation, theory, and scaling issues, as well as offering an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling. Autorid: Juin J. Liou, Frank Schwierz, Hei Wong