512 GB; Ketta vorm-faktor: M.2 2280; Välkmälu tüüp: 3D NAND flash; Ühenduse tüüp: PCIe 3.0 x 4; Maksimaalne lugemiskiirus: 1700 MB/s; Maksimaalne kirjutamiskiirus: 1400 MB/s;
CD8P-V NVMe SSDs for Mixed-Use Data Center ApplicationsThe KIOXIA CD8P-V Series consists of mixed-use NVMe SSDs for data centers, optimized to support a wide range of scalable cloud applications, including big data/IoT, online transaction processing, and virtualization. Equipped with a PCIe 5.0 interface (32 GT/s x4), the CD8P-V Series SSDs deliver consistent performance of up to 2,000K IOPS (random read) and 400K IOPS (random write), while also providing 60-80% higher sequential read performance compared to the previous-generation PCIe 4.0 SSDs (KIOXIA CD8-V Series). CD8P-V SSDs in 2.5-inch form factors, featuring KIOXIA 5th-generation TLC BiCS FLASH, offer endurance of 3 DWPD (Drive Writes Per Day) and capacities of up to 12.8 TB in a 2.5-inch enclosure, making them ideal for hyperscale data center applications.
Samsung's PM9D3a Solid State Drive The PM9D3a is a highly advanced PCIe Gen5.0 Non-Volatile Memory Express (NVMe) server SSD, offering exceptional performance, power-efficiency, and reliability for enterprise-server and multicore processing data system environments. These improvements not only address the demands of today’s data storage acceleration, but also lower the cost of maintaining the data center environment.
CD8P-V NVMe SSDs for Mixed-Use Data Center ApplicationsThe KIOXIA CD8P-V Series consists of mixed-use NVMe SSDs for data centers, optimized to support a wide range of scalable cloud applications, including big data/IoT, online transaction processing, and virtualization. Equipped with a PCIe 5.0 interface (32 GT/s x4), the CD8P-V Series SSDs deliver consistent performance of up to 2,000K IOPS (random read) and 400K IOPS (random write), while also providing 60-80% higher sequential read performance compared to the previous-generation PCIe 4.0 SSDs (KIOXIA CD8-V Series). CD8P-V SSDs in 2.5-inch form factors, featuring KIOXIA 5th-generation TLC BiCS FLASH, offer endurance of 3 DWPD (Drive Writes Per Day) and capacities of up to 12.8 TB in a 2.5-inch enclosure, making them ideal for hyperscale data center applications.
• Engineered for minimal power consumption, optimizing efficiency and reducing operational costs without compromising performance • Achieve optimized solutions at low cost for your enterprise's mixed workloads with high-speed random read performance
NVME M.2 PCIe Gen4|Write speed 1750 MBytes/sec|Read speed 4500 MBytes/sec|MTBF 2000000 hours. A specialist data center product, this cutting-edge solution offers up to 190,000 IOPS random write time and 6950 MB/S sequential read, as well as up to 50% faster restart times compared to its predecessor. It’s also available in a range of form factors, including M.2, U.2 and E1.S. Providing significant improvements for those needing high end storage, there’s plenty to attract growing data centers that want to create value.
