Low Voltage, High PerformanceRequired only 1.35V, the G.SKILL low voltage SO-DIMM memory kit consumes less power and generates less heat. It is the perfect memory solution to extend your laptop's battery life and enhance the stability due to lower temperature.DDR3 1.5V SupportDoes your system only support DDR3 1.5V SO-DIMM? No problem! G.SKILL 1.35V SO-DIMM kit is also compatible with systems that support DDR3 1.5V!Boost The Performance Of Your Laptop MachinesWant to speed up your laptop? G.SKILL SO-DIMM memory is here to help! You will feel the speed upgrade instantly no matter if you are gaming, programming, multimedia editing or just surfing around the web! It is one of the smartest and most cost-effective ways to enhance your productivity and computing experience on your laptop!The Best In Class QualityEvery G.SKILL SO-DIMM memory kit is 100% validated with G.SKILL rigorous burn-in tests. It ensures every kit delivers perfect stability, performance and quality for your laptop machine.Model name F3-1600C11D-16GSLCapacity 16 GB (2 x 8192 MB)Module amount 2 piecesplacement two-sidedDesign SO-DIMMType DDR3Connection 204-PinVoltage by 1.35 Voltage until 1.5 VoltageStandard DDR3-1600 (PC3-12800)TimingsCAS latency (CL) 11RAS-to-CAS delay (tRCD) 11RAS-Precharge time (tRP) 11Row-Active time (tRAS) 28
The Patriot PVSR416G360C0 is a 16 GB DDR4-3600 memory module (PC4-28800) from the Viper Steel RGB series. The 288-pin unbuffered DIMM supports a latency of 20-26-26-46 at 3600 MHz and requires 1.35 volts of voltage. A feature of the Viper Steel RGB series is the adjustable RGB LED lighting. Intel's XMP version 2.0 is supported. Type DDR4 Color black EAN 0814914027912 Manufacturer no. PVSR416G360C0 Viper Steel RGB series Capacity 16GB Number 1 piece DIMM design Lighting color RGB Profiles INTEL XMP (version 2.0) 288-pin connector Voltage 1.35 volts Standard DDR4-3600 (PC4-28800) Physical clock 1800 MHz Timings CAS Latency (CL) 20 Timings RAS-to-CAS delay (tRCD) 26 Timings RAS Precharge Time (tRP) 26 Timings Row Active Time (tRAS) 46 Further information DDR4 is the further development of DDR3 and offers a number of innovations and advantages compared to its predecessor, such as up to 40% lower energy consumption, higher speeds, higher data density (enables memory modules with a capacity of up to 128 GB, in the future up to 512 GB) as well as improved stability in operation through advanced error correction techniques such as CRC (Cyclic Redundancy Check), CMD/ADD (On-chip parity detection) and "Per DRAM Addressability".
