The DDR5 memory is bringing in a huge increase in performance for every server or workstation using this advanced technology. The clock speed starts with a 50% increase over the last generation of DDR4 memory and already shows additional speed bumps above that to 6400 MT/s. The underlying architecture has been enhanced as well to give additional boosts to the overall system performance. Of course, every application will respond differently to these changes, but for any application using high CPU core counts and is already bandwidth limited by the memory in a DDR4 system, the performance improvement should be shocking.
Patriot Memory’s Signature Line DDR3 Non-ECC Unbuffered memory delivers the quality, reliability and performance expected for today’s computer needs. These 4GB modules are designed to run at PC3-12800 (1600MHz) at CAS 11 latency timings.
Low Voltage, High PerformanceRequired only 1.35V, the G.SKILL low voltage SO-DIMM memory kit consumes less power and generates less heat. It is the perfect memory solution to extend your laptop's battery life and enhance the stability due to lower temperature.DDR3 1.5V SupportDoes your system only support DDR3 1.5V SO-DIMM? No problem! G.SKILL 1.35V SO-DIMM kit is also compatible with systems that support DDR3 1.5V!Boost The Performance Of Your Laptop MachinesWant to speed up your laptop? G.SKILL SO-DIMM memory is here to help! You will feel the speed upgrade instantly no matter if you are gaming, programming, multimedia editing or just surfing around the web! It is one of the smartest and most cost-effective ways to enhance your productivity and computing experience on your laptop!The Best In Class QualityEvery G.SKILL SO-DIMM memory kit is 100% validated with G.SKILL rigorous burn-in tests. It ensures every kit delivers perfect stability, performance and quality for your laptop machine.Model name F3-1600C11D-16GSLCapacity 16 GB (2 x 8192 MB)Module amount 2 piecesplacement two-sidedDesign SO-DIMMType DDR3Connection 204-PinVoltage by 1.35 Voltage until 1.5 VoltageStandard DDR3-1600 (PC3-12800)TimingsCAS latency (CL) 11RAS-to-CAS delay (tRCD) 11RAS-Precharge time (tRP) 11Row-Active time (tRAS) 28
