High QualityTested and certifiedMatching PerformanceReliable with 10 years Warranty In CoreParts you will find a wide range of alternative RAM modules all using original chip sets, that match the performance of your original RAM modules with different sizes, and capacities, manufactured by high-end, certified and trusted suppliers. Warranty (Month(s)): 120Net Weight (Product,kg): 0,01Height (Product,cm): 3,0Width (Product,cm): 14,0Depth (product,cm): 8,0Gross Weight (Package,kg): 0,01Height (Package,cm): 3,0Width (Package,cm): 14,0Depth (Package,cm): 8,0Compatible products: Lenovo/IBM ThinkPad T T590 (20N4,20N5)Component for: NotebookECC: NoInternal memory (GB): 32,0Internal memory type: DDR4Memory clock speed (MHz): 2666,0Memory layout (modules x size) (GB): 1 x 32Product colour: GreenUNSPSC Code: 43201402
Low Voltage, High PerformanceRequired only 1.35V, the G.SKILL low voltage SO-DIMM memory kit consumes less power and generates less heat. It is the perfect memory solution to extend your laptop's battery life and enhance the stability due to lower temperature.DDR3 1.5V SupportDoes your system only support DDR3 1.5V SO-DIMM? No problem! G.SKILL 1.35V SO-DIMM kit is also compatible with systems that support DDR3 1.5V!Boost The Performance Of Your Laptop MachinesWant to speed up your laptop? G.SKILL SO-DIMM memory is here to help! You will feel the speed upgrade instantly no matter if you are gaming, programming, multimedia editing or just surfing around the web! It is one of the smartest and most cost-effective ways to enhance your productivity and computing experience on your laptop!The Best In Class QualityEvery G.SKILL SO-DIMM memory kit is 100% validated with G.SKILL rigorous burn-in tests. It ensures every kit delivers perfect stability, performance and quality for your laptop machine.Model name F3-1600C11D-16GSLCapacity 16 GB (2 x 8192 MB)Module amount 2 piecesplacement two-sidedDesign SO-DIMMType DDR3Connection 204-PinVoltage by 1.35 Voltage until 1.5 VoltageStandard DDR3-1600 (PC3-12800)TimingsCAS latency (CL) 11RAS-to-CAS delay (tRCD) 11RAS-Precharge time (tRP) 11Row-Active time (tRAS) 28
