Get faster PC performance with PNY DDR5 PC Memory upgrade Want to work with the latest memory-intensive applications like graphic design and video editing tools? Want to upgrade your system to the latest DRAM technology? The PNY 4800MHz DDR5 memory upgrade gives you the speed and reliability you need to get the most out of your system. For over 35 years, PNY has rigorously sourced, tested and manufactured memory upgrades for thousands of the most popular PC platforms. No matter what you do on your PC, you'll do it better and faster with PNY's DDR5 4800MHz upgrade. DDR5 4800 MHz performance PNY DDR5 memory features faster speeds, higher bandwidth, lower power consumption, and better thermal performance, providing noticeable improvements in your computer's responsiveness when running memory-intensive applications. PNY DDR5 memory modules are rigorously designed and tested to ensure stable and reliable performance in real-world computing environments.
Das Patriot VEU516G6036 ist ein 16 GB DDR5-6000 (PC5-48000) Speichermodul aus der VIPER Elite 5 Ultra Serie. Die Gesamtkapazität beträgt 16 GB. Das 288-Pin Modul unterstützt eine Latenz von 36-46-46-110 bei 6000 MHz und benötigt 1,35 Volt Spannung. Intels XMP Version 3.0 und AMD EXPO werden unterstützt.
The ADATA AX4U320032G16A-DCBK20 is a kit of 2x 32 GB DIMM DDR4-3200 (PC4-25600) memory modules from the XPG Gammix series. The total capacity is 64 GB (2x 32 GB). The 288-pin module supports a latency of 16, at a maximum frequency of 3200 MHz and requires 1.1 volts of voltage. Intel's XMP version 2.0 is supported. Type DDR4 Color black EAN 4711085933911 Manufacturer no. AX4U320032G16A-DCBK20 XPG Gammix D20 series Capacity 64 GB (2 x 32 GB) Number 2 pieces DIMM design Profiles INTEL XMP (version 2.0) 288-pin connector Voltage 1.2 volts (from 1.35 to 1.4 volts) Standard DDR4-3200 (PC4-25600) Physical clock 1600 MHz Timings CAS Latency (CL) 16 Timings RAS-to-CAS delay (tRCD) 20 Timings RAS Precharge Time (tRP) 20 Further information DDR4 is the further development of DDR3 and offers a number of innovations and advantages compared to its predecessor, such as up to 40% lower energy consumption, higher speeds, higher data density (enables memory modules with a capacity of up to 128 GB, in the future up to 512 GB) as well as improved stability in operation through advanced error correction techniques such as CRC (Cyclic Redundancy Check), CMD/ADD (On-chip parity detection) and "Per DRAM Addressability".
