SAMSUNG 4GB SODIMM, 1.35V 1600 x8 Memory Technology DDR3 SDRAM Storage Capacity 4 GB Memory Form Factor SODIMM 204-pin Memory Modules Quantity 1 Provides Error Checking Method Non-ECC Memory Module Configuration 512 x 64 Memory Speed 1600MHz(PC3-12800) CAS Latency CL11 TRCD 11 TRP 11 Memory Features Unbuffered Low Voltage Compliant Devices Notebook Other Maximum Operating Ambient Temperature 85 °C Minimum Operating Ambient Temperature 0 °C Nominal Supply Voltage 1.35 V Package Type Retail Warranty Products Returnable Yes Warranty Term (month) 24 month(s) Warranty Validation Criteria Serial Number Pack Weight Brutto (kg) 0.04 kg Pieces in pack 1 Box Weight Brutto (kg) 0.04 kg Retail Packaging Net Weight Carton 0.04 kg Retail Packaging Net Weight Plastic 0.04 kg Packs in Box 1
As the PC industry transitions to Windows Vista - with minimum DRAM requirements of 1GB - SAMSUNG's broad, high-volume line of DDR2 solutions will enable PCs to get the most from this new operating system. Special Features SAMSUNG DDR2 DIMMs adhere to JEDEC's DDR2 specifications by adding core functions that include: off-chip-driver calibration to maintain optimal driver strength; on-die termination for maximum signal integrity; and posted CAS, a command control method to enhance bus efficiency. SAMSUNG's DDR2 DIMMs feature a 4-bit pre-fetch scheme that delivers twice the external bandwidth of DDR memory for the same internal frequency. As a result, advanced desktops can support better media playback and 3D graphics performance.low power and high speed for notebook PCsDDR2 SDRAM SODIMMs from SAMSUNG deliver significant benefits to portable PC makers.These include a space-saving form factor, low power consumption, improved thermal characteristics, and high bandwidth. Resulting in greater performance per watt and improved battery life compared to other memory standards, SAMSUNG DDR2 SODIMMs are available in densities from 256MB to 2GB and feature speeds up to 800Mb/second.broadest selection of DDR2SAMSUNG DDR2 modules for portable PCs are part of the industry's broadest selection of DDR2 SDRAM solutions that include high-performance memory for today's most advanced mobile, desktop and server systems.SAMSUNG's DDR2 SODIMMs are based on the company's monolithic component technology and manufactured using its exacting process technology, which currently goes down to 60nm. FBGA packaging technology enables high frequency.advanced featuresSAMSUNG DDR2 SODIMMs adhere to JEDEC's DDR2 specifications by adding core functions that include: off-chip-driver calibration to maintain optimal driver strength; on-die termination for maximum signal integrity; and posted CAS, a command control method to enhance bus efficiency. SAMSUNG's DDR2 SODIMMs feature a 4-bit pre-fetch scheme that delivers more than twice the external bandwidth of DDR memory for the same internal frequency.Sisemälu2 GBSisemälu tüüpDDR2Mälu taktsagedus800 MHzViikide arv240
Memory type DDR3|4GB|1600 MHz|240-pin DIMM|CL 11|Nominal voltage 1.5 V|Number of modules 1 Memory type DDR3 Memory module capacity 4GB Frequency speed 1600 MHz Module form factor 240-pin DIMM CL 11 Nominal voltage 1.5 V Number of modules 1 Shipping box quantity 250 Unit Brutto Volume 0,0002064 cubm Unit Net Weight 0,012 kg Unit Gross Weight 0,026 kg
Memory type DDR3|8GB|1600 MHz|Chip Organization 1024Mx64 Memory type DDR3 Memory module capacity 8GB Frequency speed 1600 MHz Chip Organization 1024Mx64 Shipping box quantity 250 Unit Brutto Volume 0,0002064 cubm Unit Net Weight 0,02 kg Unit Gross Weight 0,026 kg
Samsung DRAM 8GB DDR4 SODIMM, 2133Mhz, 1.2V Memory Technology DDR4 SDRAM Storage Capacity 8 GB Memory Form Factor SODIMM 260-pin Memory Modules Quantity 1 Provides Error Checking Method Non-ECC Memory Module Configuration 1024 x 64 Memory Speed 2133MHz(PC4-17000) CAS Latency CL15 TRCD 15 TRP 15 Memory Features Unbuffered Compliant Devices Notebook Other Maximum Operating Ambient Temperature 85 °C Minimum Operating Ambient Temperature 0 °C Nominal Supply Voltage 1.2 V Package Type Retail Warranty Products Returnable Yes Warranty Term (month) 24 month(s) Warranty Validation Criteria Serial Number Pack Weight Brutto (kg) 0.04 kg Pieces in pack 1 Box Weight Brutto (kg) 0.04 kg Retail Packaging Net Weight Carton 0.04 kg Retail Packaging Net Weight Plastic 0.04 kg Packs in Box 1
Samsung DDR4 LRDIMM (load reduced memory module) technology uses a distributed buffer approach to accomplish memory bandwidth efficiencies when scaling to higher capacities and speed on the upcoming DDR4 enterprise server systems, as compared to DDR4 RDIMM (registered memory modules). LRDIMM, in general, have continued to evolve and improved their value to system users, and DDR4 LRDIMM is expected to launch memory subsystem performance to a new paradigm. DDR4 LRDIMM not only appeals to the highest capacities, but also to a much wider range of applications that require highest bandwidth and/or highest capacities.In addition to LRDIMM’s features, Samsung DDR4 memory is available as LRDIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products. Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership.Sisemälu32 GBSisemälu tüüpDDR4Mälu taktsagedus2133 MHzKomponentPC/serverMälu kujutegur288-pin DIMMMälu paigutus (moodulid x suurus)1 x 32 GBCAS-latentsusaeg15Mälu pinge1.2 VMälu pingerida4HalogeenivabaJahLaius133,3 mmKõrgus30 mm
Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM products are found in computers - from ultra-mobile portables to powerful servers - and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industry’s widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products.Sisemälu4 GBSisemälu tüüpDDR3Mälu taktsagedus1333 MHzMälu paigutus (moodulid x suurus)2 x 2 GBCAS-latentsusaeg9Mälu pinge1.5 VECCEiMooduli konfiguratsioon512M x 64Mälu tüüpPC3-10600Pakendi tüüpDIMMPuhverdamata mäluJahMälu pingerida2
DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.Sisemälu8 GBSisemälu tüüpDDR3LMälu taktsagedus1600 MHzKomponentPC/serverMälu kujutegur240-pin DIMMMälu paigutus (moodulid x suurus)1 x 8 GBCAS-latentsusaeg11Mälu pinge1.35 VPuhverdamata mäluJahMälu pingerida2HalogeenivabaJahLaius133,3 mmKõrgus30 mm
Boost your PC’s performance to new levels.You need the right expert for the right PC memory solution.Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.Improved bandwidth for high-end applications.With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.Complete multi-tasking with less energy.Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.Double your capacity with the world’s 1st 8Gb chips.The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.Sisemälu16 GBSisemälu tüüpDDR3Mälu taktsagedus1866 MHzKomponentPC/serverMälu kujutegur240-pin DIMMMälu paigutus (moodulid x suurus)1 x 16 GBCAS-latentsusaeg13Mälu pinge1.5 VECCJahRegistreeritudJahMooduli konfiguratsioon4096M x 72Rea tsükliaeg13 nsRea tsükliaja värskendus13 nsRoHS-vastavusJahKasutamistemperatuur (T-T)0 - 85 °CLaius133,3 mmSügavus4 mmKõrgus30 mm
Boost your PC’s performance to new levels.You need the right expert for the right PC memory solution.Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.Improved bandwidth for high-end applications.With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.Complete multi-tasking with less energy.Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.Double your capacity with the world’s 1st 8Gb chips.The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.Sisemälu32 GBSisemälu tüüpDDR3Mälu taktsagedus1866 MHzKomponentPC/serverMälu kujutegur240-pin DIMMMälu paigutus (moodulid x suurus)1 x 32 GBCAS-latentsusaeg13Mälu pinge1.5 VECCJahRegistreeritudJahMooduli konfiguratsioon4096M x 72Rea tsükliaeg13 nsRea tsükliaja värskendus13 nsMälu pingerida4HalogeenivabaJahKasutamistemperatuur (T-T)0 - 85 °CLaius133,3 mmSügavus4,8 mmKõrgus30,4 mm
